MMDF3N02HDR2
MOSFET N-CH 20V 3.8A 8SOICManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MMDF3N02HDR2 is an N-Channel Power MOSFET designed for demanding applications. This component features a 20 V Drain-to-Source Voltage (Vdss) and a continuous drain current capability of 3.8 A at 25°C (Ta). With a maximum on-resistance (Rds On) of 90 mOhm at 3 A and 10 V, it offers efficient switching performance. The device supports gate drive voltages from 4.5 V to 10 V, and has a typical gate charge (Qg) of 18 nC at 10 V, with an input capacitance (Ciss) of 630 pF at 16 V. This MOSFET operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2 W (Ta). Packaged in an 8-SOIC (0.154", 3.90mm width) format, the MMDF3N02HDR2 is supplied on a tape and reel. Its specifications make it suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 630 pF @ 16 V |
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