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MMBF2202PT1G

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MMBF2202PT1G

MOSFET P-CH 20V 300MA SC70-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MMBF2202PT1G is a P-Channel MOSFET designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 20 V and a continuous drain current (Id) of 300mA at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 2.2 Ohms at 200mA and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 2.7 nC at 10V and an input capacitance (Ciss) of 50 pF at 5V. The MMBF2202PT1G is housed in an SC-70-3 (SOT323) package and operates within a temperature range of -55°C to 150°C. Its power dissipation is rated at 150mW at 25°C (Ta). This MOSFET is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C300mA (Ta)
Rds On (Max) @ Id, Vgs2.2Ohm @ 200mA, 10V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageSC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 5 V

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