MMBF2201NT1G

MOSFET N-CH 20V 300MA SC70-3

Manufacturer: onsemi

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The onsemi MMBF2201NT1G is an N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 300 mA at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 1 Ohm at 300 mA and 10 V Vgs. Key parameters include a maximum power dissipation of 150 mW (Ta) and an input capacitance (Ciss) of 45 pF at 5 V. The threshold gate-source voltage (Vgs(th)) is a maximum of 2.4 V at 250 µA. The MMBF2201NT1G is housed in an SC-70-3 (SOT323) package and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is commonly utilized in various electronic systems, including general-purpose switching and amplification circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:

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Technical Details:

Packaging	Tape & Reel (TR)
Package / Case	SC-70, SOT-323
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)
Rds On (Max) @ Id, Vgs	1Ohm @ 300mA, 10V
FET Feature	-
Power Dissipation (Max)	150mW (Ta)
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	SC-70-3 (SOT323)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Vgs (Max)	±20V
Drain to Source Voltage (Vdss)	20 V
Input Capacitance (Ciss) (Max) @ Vds	45 pF @ 5 V