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MLD1N06CLT4G

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MLD1N06CLT4G

IC MOSFET POWER N-CH 1A 65V DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MLD1N06CLT4G, a SMARTDISCRETES™ series N-Channel Power MOSFET, offers a 65V drain-source voltage and 1A continuous drain current. This component features a low Rds On of 750mOhm at 1A and 5V Vgs, enabling efficient power switching. Designed for surface mount applications, it is housed in a TO-252-3, DPAK package. The device supports a maximum power dissipation of 40W and operates across a wide temperature range of -50°C to 150°C. This MOSFET is suitable for applications in automotive and industrial power management systems.

Additional Information

Series: SMARTDISCRETES™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-50°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1A
Rds On (Max) @ Id, Vgs750mOhm @ 1A, 5V
FET Feature-
Power Dissipation (Max)40W
Vgs(th) (Max) @ Id-
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)-
Drain to Source Voltage (Vdss)65 V

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