MGSF1P02LT1
MOSFET P-CH 20V 750MA SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MGSF1P02LT1 is a P-Channel enhancement mode MOSFET designed for high-density applications. This device features a Drain-to-Source Voltage (Vdss) of 20V and a continuous Drain current (Id) of 750mA at 25°C. The Rds(On) is specified at a maximum of 350mOhm when driven at 10V Vgs and 1.5A Id. With a maximum power dissipation of 400mW (Ta), it is suitable for thermal management in compact designs. The input capacitance (Ciss) is 130 pF at 5V Vds. This MOSFET utilizes Metal Oxide technology and is housed in a SOT-23-3 (TO-236) surface mount package, supplied on tape and reel. It operates across a temperature range of -55°C to 150°C. The MGSF1P02LT1 finds application in power management and switching circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Ta) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 130 pF @ 5 V |
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