MGSF1N03LT3G
MOSFET N-CH 30V 1.6A SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MGSF1N03LT3G is an N-Channel MOSFET designed for efficient switching applications. This component features a Drain-Source voltage (Vdss) of 30 V and can handle a continuous drain current (Id) of 1.6 A at 25°C. The Rds On is specified at a maximum of 100 mOhm at 1.2 A and 10 V gate drive. With a maximum power dissipation of 420 mW (Ta), it is packaged in a compact SOT-23-3 (TO-236) surface-mount case. Key parameters include an input capacitance (Ciss) of 140 pF at 5 V and a gate threshold voltage (Vgs(th)) of 2.4 V at 250 µA. The operating temperature range is from -55°C to 150°C (TJ). This MOSFET is suitable for use in various electronic systems, including power management and general-purpose switching circuits across industries such as consumer electronics and industrial automation. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 420mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 5 V |
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