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MGSF1N03LT3

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MGSF1N03LT3

MOSFET N-CH 30V 1.6A SOT23-3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MGSF1N03LT3 is an N-Channel MOSFET designed for surface-mount applications. This component features a drain-to-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 1.6 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 100 mOhm at 1.2 A and 10 V gate-source voltage. With a maximum gate-source voltage (Vgs) of ±20 V and a threshold voltage of 2.4 V (max) at 250 µA, it offers robust operation across a temperature range of -55°C to 150°C. The MGSF1N03LT3 is housed in a compact SOT-23-3 (TO-236) package, supplied on tape and reel. Its specifications make it suitable for applications in power management and general switching within the industrial and automotive sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C1.6A (Ta)
Rds On (Max) @ Id, Vgs100mOhm @ 1.2A, 10V
FET Feature-
Power Dissipation (Max)420mW (Ta)
Vgs(th) (Max) @ Id2.4V @ 250µA
Supplier Device PackageSOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds140 pF @ 5 V

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