MGSF1N02LT1
MOSFET N-CH 20V 750MA SOT23-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MGSF1N02LT1 is an N-Channel MOSFET designed for general-purpose switching applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous Drain Current (Id) of 750mA at 25°C ambient. The on-resistance (Rds On) is specified as a maximum of 90mOhm at 1.2A and 10V Vgs. It offers a low gate threshold voltage (Vgs(th)) of 2.4V maximum at 250µA. The component has an input capacitance (Ciss) of 125pF maximum at 5V Vds. Power dissipation is rated at 400mW ambient. The MGSF1N02LT1 is housed in a SOT-23-3 (TO-236) surface-mount package and operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 750mA (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 400mW (Ta) |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 125 pF @ 5 V |
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