MCH6445-TL-W
MOSFET N-CH 60V 4A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MCH6445-TL-W is an N-Channel MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Ta). With a maximum power dissipation of 1.5W (Ta) and an operating junction temperature of 150°C, it is suitable for power management in industrial and automotive sectors. The device offers a low Rds On of 78mOhm at 2A and 10V, and a gate charge (Qg) of 10 nC at 10V. It is available in a 6-MCPH package, suitable for surface mounting and supplied on tape and reel. The input capacitance (Ciss) is a maximum of 505 pF at 20V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 505 pF @ 20 V |
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