MCH6444-TL-H
MOSFET N-CH 35V 2.5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MCH6444-TL-H is an N-Channel MOSFET featuring a 35V drain-source voltage and a continuous drain current of 2.5A at 25°C (Ta). This component offers a maximum on-resistance of 98mOhm at 1.5A and 10V Vgs. It operates with a gate-source voltage range of ±20V and a threshold voltage (Vgs(th)) that is not specified. The device has a gate charge of 4nC and input capacitance of 186pF. Designed for surface mounting in a 6-MCPH (6-SMD, Flat Leads) package, it has a power dissipation of 800mW (Ta) and an operating junction temperature of 150°C. This MOSFET is suitable for power management and switching applications across various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 35 V |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 186 pF @ 20 V |
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