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MCH6437-TL-E

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MCH6437-TL-E

MOSFET N-CH 20V 7A 6MCPH

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH6437-TL-E is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 7A at 25°C (Ta), with a maximum power dissipation of 1.5W (Ta). The Rds On is specified at a maximum of 24mOhm at 4A and 4.5V Vgs, supported by drive voltages ranging from 1.8V to 4.5V. Key parameters include a Gate Charge (Qg) of 8.4 nC at 4.5V and an Input Capacitance (Ciss) of 660 pF at 10V. This surface mount device is housed in a 6-MCPH package, suitable for high-density designs. It operates efficiently across a temperature range up to 150°C (TJ). The MCH6437-TL-E finds utility in power management, consumer electronics, and automotive systems. It is supplied in tape and reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 4A, 4.5V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device Package6-MCPH
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs8.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds660 pF @ 10 V

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