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MCH6436-TL-W

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MCH6436-TL-W

MOSFET N-CH 30V 6A SC88FL/MCPH6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH6436-TL-W is an N-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 6 A at 25°C, with a maximum power dissipation of 1.5 W. The device exhibits a low on-resistance (Rds On) of 34 mOhm at 3 A and 4.5 V gate drive, supported by drive voltages ranging from 1.8 V to 4.5 V. Key characteristics include a gate charge of 7.5 nC at 4.5 V and input capacitance (Ciss) of 710 pF at 10 V. Packaged in a compact SC-88FL/MCPH6 (6-TSSOP, SC-88, SOT-363) surface mount configuration, it operates across a temperature range of -55°C to 150°C. This MOSFET is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C6A (Ta)
Rds On (Max) @ Id, Vgs34mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device PackageSC-88FL/MCPH6
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs7.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds710 pF @ 10 V

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