MCH6421-TL-E
MOSFET N-CH 20V 5.5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi N-Channel MOSFET, part number MCH6421-TL-E, offers a 20V drain-source voltage capability with a continuous drain current of 5.5A at 25°C. This device features a low Rds(on) of 38mOhm at 2A and 4.5V Vgs, with drive voltages ranging from 1.8V to 4.5V. The gate charge is specified at 5.1 nC maximum at 4.5V Vgs, and input capacitance (Ciss) is 410 pF maximum at 10V Vds. Designed for efficient power management, this MOSFET operates within a junction temperature range of 150°C. It is housed in a 6-MCPH surface mount package, supplied on tape and reel. This component is widely utilized in power switching applications across various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.1 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 10 V |