MCH6341-TL-W
MOSFET P-CH 30V 5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MCH6341-TL-W is a P-Channel MOSFET designed for high-density power management applications. This component features a drain-source breakdown voltage (Vds) of 30 V and a continuous drain current (Id) of 5 A at 25°C. The on-resistance (Rds On) is specified at a maximum of 59 mOhm when conducting 3 A with a 10 V gate-source voltage (Vgs). It offers a gate charge (Qg) of 10 nC at 10 V and an input capacitance (Ciss) of 430 pF at 10 V. The device supports a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2.6 V at 1 mA. Operating up to 150°C (TJ), this MOSFET is suitable for industrial and automotive applications. It is packaged in a 6-MCPH configuration for surface mounting and supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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