MCH6341-TL-H
MOSFET P-CH 30V 5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MCH6341-TL-H is a P-channel MOSFET with a drain-source voltage (Vdss) of 30V. It offers a continuous drain current (Id) of 5A at 25°C (Ta) and a maximum power dissipation of 1.5W (Ta). This surface mount component features an Rds On of 59mOhm at 3A and 10V, with gate drive voltages ranging from 4V to 10V. The input capacitance (Ciss) is a maximum of 430pF at 10V, and the gate charge (Qg) is 10nC at 10V. The MCH6341-TL-H is supplied in a 6-MCPH package, presented on tape and reel. This device is suitable for applications in consumer electronics and industrial power management.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |
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