MCH6341-TL-E
MOSFET P-CH 30V 5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MCH6341-TL-E is a P-Channel MOSFET designed for demanding applications. This surface mount component offers a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. With a maximum power dissipation of 1.5W (Ta), it is suitable for use in power management circuits. The device features a low on-resistance (Rds On) of 59mOhm at 3A and 10V, facilitated by a gate drive voltage range of 4V to 10V. Key electrical parameters include a gate charge (Qg) of 10 nC at 10V and input capacitance (Ciss) of 430 pF at 10V. The P-Channel MOSFET is supplied in a 6-MCPH package, presented in tape and reel. This component finds application in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V |