MCH6337-TL-H
MOSFET P-CH 20V 4.5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MCH6337-TL-H is a P-Channel MOSFET designed for efficient power switching. This component features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) rating of 4.5 A at 25°C. The device exhibits a maximum on-resistance (Rds On) of 49mOhm at 3A and 4.5V gate-source voltage. With a maximum power dissipation of 1.5W (Ta), it is suitable for applications requiring moderate power handling. The gate charge is specified at 7.3 nC maximum at 4.5V, and input capacitance (Ciss) is a maximum of 670 pF at 10V. Operating at junction temperatures up to 150°C, this MOSFET is supplied in a 6-MCPH package for surface mounting, delivered on tape and reel. This component finds application in consumer electronics and industrial power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 49mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 10 V |
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