MCH6336-TL-H
MOSFET P-CH 12V 5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi MCH6336-TL-H is a P-Channel MOSFET designed for advanced power management applications. Featuring a 12V drain-source breakdown voltage and a continuous drain current capability of 5A at 25°C, this device offers low on-resistance of 43mOhm at 3A and 4.5V Vgs. The MCH6336-TL-H operates with a gate drive voltage range of 1.8V to 4.5V and boasts a gate charge of 6.9 nC at 4.5V, contributing to efficient switching performance. Its input capacitance (Ciss) is a maximum of 660 pF at 6V. The component is housed in a 6-MCPH package, suitable for surface mounting and optimized for thermal management with a maximum power dissipation of 1.5W (Ta). Operating over an extended temperature range up to 150°C (TJ), this MOSFET finds utility in various industries including automotive and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.9 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 6 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
