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MCH6331-TL-W

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MCH6331-TL-W

MOSFET P-CH 30V 3.5A MCPH6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH6331-TL-W is a P-channel MOSFET designed for efficient power switching applications. This device features a drain-to-source voltage (Vdss) of 30V and a continuous drain current (Id) of 3.5A at 25°C, with a maximum power dissipation of 1.5W (Ta). The Rds On is specified at a maximum of 98mOhm at 1.5A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 5 nC (max) at 10V and an input capacitance (Ciss) of 250 pF (max) at 10V. The MOSFET operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2.6V (max) at 1mA. It is housed in a compact SC-88FL/MCPH6 package, suitable for surface mounting, and is supplied on tape and reel. This component is utilized in various industries, including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs98mOhm @ 1.5A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device PackageSC-88FL/MCPH6
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds250 pF @ 10 V

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