MCH6331-TL-E
MOSFET P-CH 30V 3.5A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi P-Channel MOSFET, part number MCH6331-TL-E, offers a 30V drain-source voltage and a continuous drain current of 3.5A at 25°C. This surface mount device, packaged in a 6-MCPH configuration, features a maximum power dissipation of 1.5W. The Rds On is specified at 98mOhm maximum at 1.5A and 10V Vgs. Key parameters include a gate charge of 5 nC maximum at 10V Vgs and input capacitance of 250 pF maximum at 10V Vds. The operating temperature range extends to 150°C (TJ). This MOSFET is suitable for applications in power management and general-purpose switching across various electronic systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 10 V |
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