MCH6321-TL-W
MOSFET P-CH 20V 4A 6MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MCH6321-TL-W P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 4A at 25°C. This device features a low Rds On of 83mOhm at 2A, 4.5V. The gate drive voltage ranges from 1.8V to 4.5V. With a maximum power dissipation of 1.5W (Ta), it is suitable for applications operating up to 150°C (TJ). The MCH6321-TL-W is supplied in a 6-MCPH package, utilizing a Surface Mount mounting type. This MOSFET is commonly found in consumer electronics and power management applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 83mOhm @ 2A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 6-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 375 pF @ 10 V |
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