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MCH6320-TL-W

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MCH6320-TL-W

MOSFET P-CH 12V 3.5A MCPH6

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH6320-TL-W is a P-Channel MOSFET designed for high-efficiency power management applications. This device features a 12V drain-source breakdown voltage and a continuous drain current capability of 3.5A at 25°C ambient temperature, with a maximum power dissipation of 1.5W (Ta). The low on-resistance of 70mOhm at 1.5A and 4.5V Vgs makes it suitable for load switching and power control. It operates with gate-source voltages up to ±10V, and its threshold voltage is 1.4V at 1mA. Key parameters include a gate charge of 5.6 nC at 4.5V and an input capacitance of 405 pF at 6V. This MOSFET is supplied in a compact SC-88FL/MCPH6 package, ideal for surface mounting in space-constrained designs. Applications include battery management, portable electronics, and general-purpose switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs70mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)1.5W (Ta)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device PackageSC-88FL/MCPH6
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs5.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds405 pF @ 6 V

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