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MCH5839-TL-W

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MCH5839-TL-W

MOSFET P-CH 20V 1.5A SC88AFL

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH5839-TL-W is a P-Channel MOSFET designed for efficient power management. This component features a 20V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) capability of 1.5A at 25°C. With a maximum on-resistance (Rds On) of 266mOhm at 750mA and 4.5V Vgs, it offers low conduction losses. The MCH5839-TL-W supports gate drive voltages ranging from 1.8V to 4.5V, with a maximum gate-source voltage (Vgs) of ±10V. It exhibits a typical gate charge (Qg) of 1.7 nC at 4.5V. The device is housed in a compact SC-88AFL/MCPH5 surface mount package, suitable for space-constrained applications. This MOSFET is commonly utilized in consumer electronics and industrial control systems. Maximum power dissipation is 800mW (Ta).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case5-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.5A (Ta)
Rds On (Max) @ Id, Vgs266mOhm @ 750mA, 4.5V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id1.4V @ 1mA
Supplier Device PackageSC-88AFL/MCPH5
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds120 pF @ 10 V

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