MCH5839-TL-H
MOSFET P-CH 20V 1.5A 5MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi P-Channel MOSFET, MCH5839-TL-H, is a 20V device designed for surface mount applications. This component features a continuous drain current (Id) of 1.5A (Ta) and a maximum power dissipation of 800mW (Ta). The Rds On is specified at 266mOhm maximum at 750mA and 4.5V Vgs. Key characteristics include a gate charge of 1.7 nC at 4.5V and an input capacitance (Ciss) of 120 pF maximum at 10V Vds. The device incorporates a Schottky diode, isolating it for specific circuit designs. Operating temperature range extends to 150°C (TJ). This MOSFET is commonly utilized in consumer electronics and general purpose switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 5-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 266mOhm @ 750mA, 4.5V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 5-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
2SK4088LS-1E
MOSFET N-CH 650V 7.5A TO220F-3FS
NTMFS4C028NT3G
MOSFET N-CH 30V 16.4A/52A 5DFN
