MCH5837-TL-E
MOSFET N-CH 20V 2A 5MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MCH5837-TL-E is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 2A at 25°C. With a low on-resistance of 145mOhm maximum at 1A and 4V, it minimizes conduction losses. The device includes an integrated Schottky diode for improved performance and protection. Key parameters include a gate charge (Qg) of 1.8 nC maximum at 4V and input capacitance (Ciss) of 115 pF maximum at 10V. The MCH5837-TL-E is housed in a compact 6-SMD (5 Leads), Flat Leads package, commonly referred to as 5-MCPH, suitable for surface mount assembly. It offers a power dissipation of 800mW at 25°C and operates at junction temperatures up to 150°C. This MOSFET is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 1A, 4V |
| FET Feature | Schottky Diode (Isolated) |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 5-MCPH |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V |
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