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MCH3486-TL-H

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MCH3486-TL-H

MOSFET N-CH 60V 2A SC70FL/MCPH3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH3486-TL-H is a high-performance N-Channel MOSFET designed for demanding applications. Featuring a 60V drain-source breakdown voltage and a continuous drain current capability of 2A at 25°C, this component is suitable for power management and switching functions. The device exhibits a maximum on-resistance of 137mOhm at 1A drain current and 10V gate-source voltage, with a gate charge of 7 nC at 10V. Its low input capacitance of 310 pF at 20V Vds facilitates efficient high-frequency operation. Engineered for surface mounting, the MCH3486-TL-H is housed in a compact SC-70FL/MCPH3 package, enabling high-density designs. It operates reliably across a wide temperature range, up to 150°C (TJ), with a maximum power dissipation of 1W (Ta). This MOSFET is frequently utilized in automotive, industrial, and consumer electronics sectors for power conversion and control.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs137mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)4V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds310 pF @ 20 V

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