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MCH3481-TL-W

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MCH3481-TL-W

MOSFET N-CH 20V 2A SC70FL/MCPH3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi MCH3481-TL-W is an N-Channel MOSFET designed for efficient power switching. This component features a drain-source breakdown voltage (Vdss) of 20 V and a continuous drain current (Id) capability of 2A at 25°C. With a maximum on-resistance (Rds On) of 104mOhm at 1A and 4.5V Vgs, it offers low conduction losses. The MCH3481-TL-W is housed in a compact SC-70FL/MCPH3 package, suitable for surface mounting applications. Key parameters include a gate charge (Qg) of 2.9 nC at 4.5V and input capacitance (Ciss) of 175 pF at 10V. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 800mW (Ta). This device is commonly utilized in portable electronics, power management circuits, and general-purpose switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs104mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id900mV @ 1mA
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Vgs (Max)±9V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds175 pF @ 10 V

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