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MCH3479-TL-H

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MCH3479-TL-H

MOSFET N-CH 20V 3.5A SC70

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH3479-TL-H is an N-Channel MOSFET designed for high-efficiency switching applications. Featuring a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3.5A at 25°C, this component offers a low on-resistance (Rds On) of 64mOhm at 1.5A and 4.5V Vgs. It supports a wide gate drive range from 1.8V to 4.5V and has a maximum gate charge (Qg) of 2.8 nC at 4.5V. The device utilizes MOSFET technology and is housed in a compact SC-70FL/MCPH3 surface-mount package, suitable for automated assembly. Its maximum power dissipation is 900mW (Ta), and it operates within a junction temperature range of -55°C to 150°C. This component finds application in consumer electronics, mobile devices, and power management systems. The MCH3479-TL-H is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs64mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)900mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs2.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds260 pF @ 10 V

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