Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

MCH3476-TL-W

Banner
productimage

MCH3476-TL-W

MOSFET N-CH 20V 2A SC70FL/MCPH3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH3476-TL-W is an N-Channel MOSFET with a Drain-Source Voltage (Vdss) of 20 V. This surface mount component, packaged in an SC-70FL/MCPH3 (3-SMD, Flat Leads), offers a continuous drain current (Id) of 2 A at 25°C and a maximum power dissipation of 800 mW. Key electrical characteristics include a maximum Rds On of 125 mOhm at 1 A and 4.5 V. The gate drive voltage range is specified from 1.8 V to 4.5 V, with a maximum gate charge (Qg) of 1.8 nC at 4.5 V and input capacitance (Ciss) of 128 pF at 10 V. This component operates within a temperature range of -55°C to 150°C. The MCH3476-TL-W is suitable for applications in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs125mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds128 pF @ 10 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
SMP3003-DL-1EX

MOSFET P-CH 75V 100A SMP-FD

product image
FDMC86324

MOSFET N-CH 80V 7A/20A POWER33

product image
NVTFS6H854NTAG

MOSFET N-CH 80V 9.5A/44A 8WDFN