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MCH3474-TL-E

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MCH3474-TL-E

MOSFET N-CH 30V 4A SC70FL/MCPH3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

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The onsemi MCH3474-TL-E is an N-Channel MOSFET designed for efficient power switching applications. Featuring a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 4A at 25°C, this component offers a low on-resistance (Rds On) of 50mOhm at 2A and 4.5V gate-source voltage. The device operates with a gate drive voltage range from 1.8V to 4.5V, with a maximum gate-source voltage of ±12V. With a maximum power dissipation of 1W (Ta) and an operating junction temperature of 150°C, the MCH3474-TL-E is suitable for demanding thermal environments. It is housed in an SC-70FL/MCPH3 package, a 3-SMD, flat lead surface mount configuration, supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 4.7 nC at 4.5V and an input capacitance (Ciss) of 430 pF at 10V. This MOSFET is commonly utilized in consumer electronics, industrial automation, and automotive systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4A (Ta)
Rds On (Max) @ Id, Vgs50mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs4.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 10 V

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