MCH3427-TL-E
MOSFET N-CH 20V 4A 3MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MCH3427-TL-E is an N-Channel MOSFET designed for demanding applications. This component features a 20 V Drain-to-Source voltage and a continuous drain current capability of 4 A at 25°C (Ta), with a maximum power dissipation of 1 W (Ta). The on-resistance is specified at 52 mOhm maximum at 2 A and 4 V Vgs. Key capacitive parameters include an input capacitance (Ciss) of 400 pF maximum at 10 V Vds and a gate charge (Qg) of 6 nC maximum at 4 V Vgs. The device is housed in a 3-MCPH surface mount package, offering efficient thermal performance with an operating junction temperature of up to 150°C. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Rds On (Max) @ Id, Vgs | 52mOhm @ 2A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-MCPH |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 10 V |
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