MCH3421-TL-E
MOSFET N-CH 100V 800MA 3MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MCH3421-TL-E. This N-Channel MOSFET offers a 100V drain-source breakdown voltage and 800mA continuous drain current at 25°C ambient. The device features a low on-resistance of 890mOhm maximum at 400mA, 10V Vgs, and a gate charge of 4.8nC at 10V. Input capacitance (Ciss) is specified at 165pF maximum at 20V. Dissipation capability is 900mW at 25°C ambient. The MCH3421-TL-E is housed in a compact 3-MCPH surface-mount package, suitable for applications in consumer electronics and industrial control systems. Operating temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 800mA (Ta) |
| Rds On (Max) @ Id, Vgs | 890mOhm @ 400mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 3-MCPH |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 4.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 165 pF @ 20 V |
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