MCH3420-TL-E
MCH3420 - N-CHANNEL SILICON MOSFManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's MCH3420-TL-E is an N-channel silicon MOSFET designed for surface mount applications. This component features a Drain to Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 500mA at 25°C. The Rds On is specified at a maximum of 1.85mOhm at 250mA and 10V, with drive voltages ranging from 4V to 10V. Key parameters include a maximum gate charge (Qg) of 3.2 nC at 10V and an input capacitance (Ciss) of 80 pF at 20V. The device offers a maximum power dissipation of 800mW (Ta) and can operate at temperatures up to 150°C. The MCH3420-TL-E is packaged in a 3-SMD, Flat Leads (3-MCPH) configuration and is supplied in bulk. This MOSFET is suitable for various applications requiring efficient switching and power control, including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Rds On (Max) @ Id, Vgs | 1.85mOhm @ 250mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 2.2V @ 1mA |
| Supplier Device Package | 3-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 20 V |
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