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MCH3383-TL-W

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MCH3383-TL-W

MOSFET P-CH 12V 3.5A SC70

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH3383-TL-W is a P-Channel MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) capability of 3.5A at 25°C. With a maximum Power Dissipation (Pd) of 1W (Ta), it is suitable for compact designs. The Rds On is specified at 69mOhm at 1.5A and 2.5V, with drive voltages ranging from 0.9V to 2.5V. Key parameters include a Gate Charge (Qg) of 6.2 nC at 2.5V and an Input Capacitance (Ciss) of 1010 pF at 6V. This MOSFET utilizes Metal Oxide technology and is housed in a surface-mount SC-70FL/MCPH3 package, supplied on tape and reel. It operates within an ambient temperature range of 150°C (TJ). The MCH3383-TL-W is utilized in various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.5A (Ta)
Rds On (Max) @ Id, Vgs69mOhm @ 1.5A, 2.5V
FET Feature-
Power Dissipation (Max)1W (Ta)
Vgs(th) (Max) @ Id800mV @ 1mA
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)0.9V, 2.5V
Vgs (Max)±5V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs6.2 nC @ 2.5 V
Input Capacitance (Ciss) (Max) @ Vds1010 pF @ 6 V

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