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MCH3382-TL-W

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MCH3382-TL-W

MOSFET P-CH 12V 2A SC70FL/MCPH3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi MCH3382-TL-W is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous Drain Current (Id) of 2A at 25°C, with a maximum power dissipation of 800mW (Ta). It offers a low On-Resistance (Rds On) of 198mOhm at 1A and 4.5V Vgs, with a threshold voltage (Vgs(th)) of 900mV at 1mA. The device supports a wide range of drive voltages, from 1.8V to 4.5V. Key parameters include a Gate Charge (Qg) of 2.3 nC at 4.5V Vgs and an Input Capacitance (Ciss) of 170 pF at 6V Vds. The MCH3382-TL-W is housed in a compact SC-70FL/MCPH3 package, suitable for surface mounting and supplied on tape and reel. Its robust performance makes it suitable for use in portable electronics and power management circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs198mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id900mV @ 1mA
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±9V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 6 V

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