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MCH3382-TL-H

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MCH3382-TL-H

MOSFET P-CH 12V 2A SC70FL/MCPH3

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi P-Channel MOSFET, part number MCH3382-TL-H, offers a 12V drain-source breakdown voltage and a continuous drain current capability of 2A at 25°C ambient. This device features a low Rds(on) of 198mOhm maximum at 1A and 4.5V Vgs. The MCH3382-TL-H is housed in a compact SC-70FL/MCPH3 package, suitable for surface mounting. Key electrical parameters include a gate-source voltage range of ±9V, a threshold voltage (Vgs(th)) maximum of -2.5V at 1mA, and a gate charge (Qg) of 2.3 nC maximum at 4.5V Vgs. Input capacitance (Ciss) is rated at 170pF maximum at 6V Vds. With a maximum power dissipation of 800mW ambient and an operating junction temperature of 150°C, this MOSFET is designed for applications in portable electronics and general power switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs198mOhm @ 1A, 4.5V
FET Feature-
Power Dissipation (Max)800mW (Ta)
Vgs(th) (Max) @ Id-
Supplier Device PackageSC-70FL/MCPH3
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±9V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs2.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds170 pF @ 6 V

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