MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MCH3376-TL-W is a P-Channel MOSFET designed for robust performance in demanding applications. This device features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 1.5A at 25°C, with a maximum power dissipation of 800mW. The onsemi MCH3376-TL-W exhibits a low on-resistance (Rds On) of 241mOhm at 750mA and 4.5V gate-source voltage. It operates with drive voltages ranging from 1.8V to 4.5V and has a gate charge (Qg) of 1.7 nC at 4.5V. The input capacitance (Ciss) is a maximum of 120pF at 10V drain-source voltage. This MOSFET is packaged in the compact 3-MCPH (SC-70, SOT-323) surface mount configuration, suitable for high-density designs, and is supplied on tape and reel. The MCH3376-TL-W is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 241mOhm @ 750mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 3-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V |
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