MCH3376-TL-E
MOSFET P-CH 20V 1.5A 3MCPHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi MCH3376-TL-E is a P-Channel MOSFET designed for surface mount applications. This component features a 20V drain-source breakdown voltage and a continuous drain current capability of 1.5A at 25°C. The MCH3376-TL-E offers a maximum on-resistance of 241mOhm at 750mA drain current and 4.5V gate-source voltage. With a gate charge of 1.7 nC at 4.5V, it is suitable for various switching applications. The device operates at temperatures up to 150°C (TJ) and has a power dissipation of 800mW (Ta). The SC-70, SOT-323 package is supplied in tape and reel. This MOSFET is commonly utilized in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 241mOhm @ 750mA, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 800mW (Ta) |
| Vgs(th) (Max) @ Id | 1.4V @ 1mA |
| Supplier Device Package | 3-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 120 pF @ 10 V |