MCH3333A-TL-W
MOSFET P-CH 30V 2A SC70FL/MCPH3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi MCH3333A-TL-W is a P-Channel MOSFET designed for efficient power management. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 2A at 25°C. The device offers a maximum power dissipation of 900mW (Ta) and a low on-resistance (Rds On) of 215mOhm at 1A, 4V. It supports a gate drive voltage range from 1.8V to 4V, with a maximum gate-source voltage (Vgs) of ±10V. The threshold voltage (Vgs(th)) is specified at 1.3V at 1mA. Key capacitances include Input Capacitance (Ciss) of 240pF at 10V and Gate Charge (Qg) of 2.8nC at 4V. This MOSFET is housed in a compact SC-70FL/MCPH3 surface-mount package and is supplied on tape and reel. Its specifications make it suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 215mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 900mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | SC-70FL/MCPH3 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.8 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 10 V |
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