MCH3312-TL-E
P-CHANNEL MOSFET FOR ULTRA-HIGHManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi P-Channel MOSFET, part number MCH3312-TL-E, offers robust performance for demanding applications. This surface mount device features a 30V drain-source voltage and a continuous drain current capability of 2A at 25°C ambient. With a maximum on-resistance of 145mOhm at 1A and 10V Vgs, it minimizes conduction losses. The device supports drive voltages from 4V to 10V and exhibits a gate charge of 5.5 nC at 10V. Its input capacitance (Ciss) is rated at a maximum of 200 pF at 10V. Packaged in a 3-MCPH (3-SMD, Flat Leads) configuration and supplied on tape and reel, this MOSFET is suitable for operation up to 150°C. It finds utility across various industries including consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A (Ta) |
| Rds On (Max) @ Id, Vgs | 145mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta) |
| Vgs(th) (Max) @ Id | 2.6V @ 1mA |
| Supplier Device Package | 3-MCPH |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 10 V |
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