ISL9N302AP3
MOSFET N-CH 30V 75A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi ISL9N302AP3 is an N-Channel UltraFET™ Power MOSFET designed for high-performance applications. This component features a 30V drain-source voltage rating and a continuous drain current capability of 75A (Tc) at 25°C. With a low on-resistance of 2.5mOhm @ 75A, 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 345W (Tc) and a wide operating temperature range from -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 300 nC @ 10V and input capacitance (Ciss) of 11000 pF @ 15V. It is packaged in a TO-220-3 through-hole configuration, suitable for demanding thermal management. This MOSFET is commonly utilized in power supply, automotive, and industrial applications requiring efficient power switching.
Additional Information
Series: UltraFET™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5mOhm @ 75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 345W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 300 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11000 pF @ 15 V |
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