IRLU110ATU
MOSFET N-CH 100V 4.7A I-PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRLU110ATU is an N-Channel Power MOSFET designed for efficient switching applications. This component features a drain-to-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 4.7 A at 25°C (Tc). With a low on-resistance (Rds On) of 440 mOhm maximum at 2.35 A and 5 V gate drive, it minimizes conduction losses. The device offers a gate charge (Qg) of 8 nC maximum at 5 V and an input capacitance (Ciss) of 235 pF maximum at 25 V. The IRLU110ATU is packaged in an IPAK (TO-251-3 Short Leads, TO-251AA) with through-hole mounting. Power dissipation is rated at 2.5 W (Ta) and 22 W (Tc). This MOSFET is suitable for use in industrial and automotive power management systems. It operates within a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) up to ±20V.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 2.35A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 22W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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