IRLS640A
MOSFET N-CH 200V 9.8A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi IRLS640A is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain current (Id) of 9.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 180mOhm at 4.9A and 5V Vgs, it offers efficient power switching. The Gate Charge (Qg) is 56 nC maximum at 5V, and the input capacitance (Ciss) is 1705 pF maximum at 25V. The device is packaged in a TO-220F-3 through-hole configuration, providing a power dissipation capability of 40W (Tc). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supplies, motor control, and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 4.9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 40W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1705 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
