IRLS630A
MOSFET N-CH 200V 6.5A TO220-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi IRLS630A is an N-Channel Power MOSFET designed for high-performance applications. This through-hole component features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain current (Id) of 6.5A at 25°C. With a maximum Rds(on) of 400mOhm at 3.25A and 5V gate drive, it offers efficient switching characteristics. The device has a gate charge (Qg) of 27 nC at 5V and input capacitance (Ciss) of 755 pF at 25V. The IRLS630A is rated for 36W power dissipation and operates across a temperature range of -55°C to 150°C. It is housed in a standard TO-220-3 package. This MOSFET is utilized in various industrial applications, including power supplies and motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 755 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
