IRLS510A
MOSFET N-CH 100V 4.5A TO220FManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRLS510A is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 4.5A at 25°C (Tc), this component offers robust performance. The device exhibits a maximum On-Resistance (Rds On) of 440mOhm at 2.25A and 5V gate drive. Key parameters include Input Capacitance (Ciss) of 235pF at 25V and Gate Charge (Qg) of 8nC at 5V. The MOSFET is housed in a TO-220F-3 package for through-hole mounting, with a maximum power dissipation of 23W (Tc). Operating temperature range is from -55°C to 175°C (TJ). This device is commonly utilized in power supply units, motor control circuits, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 2.25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 23W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-220F-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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