IRLR230ATM
MOSFET N-CH 200V 7.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi IRLR230ATM is an N-Channel Power MOSFET designed for efficient power switching applications. This TO-252AA packaged device offers a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 7.5A at 25°C (Tc). With a maximum Rds(on) of 400mOhm at 3.75A and 5V Vgs, it ensures low conduction losses. The device features a gate charge of 27nC and input capacitance of 755pF, optimized for driving. Power dissipation is rated at 2.5W (Ta) and 48W (Tc). Operating across a wide temperature range of -55°C to 150°C, this MOSFET is suitable for use in industrial, automotive, and consumer electronics power management systems. Packaging is provided on Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.75A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 755 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
