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IRLR230ATF

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IRLR230ATF

MOSFET N-CH 200V 7.5A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi IRLR230ATF is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 7.5A at 25°C (Tc). With a maximum Rds(On) of 400mOhm at 3.75A and 5V gate drive, it ensures low conduction losses. The device is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, suitable for high-density designs. Key parameters include a Gate Charge (Qg) of 27 nC at 5V and an Input Capacitance (Ciss) of 755 pF at 25V. The operating temperature range is -55°C to 150°C (TJ), with power dissipation capabilities of 2.5W (Ta) and 48W (Tc). This MOSFET is commonly utilized in power supply units, motor control, and industrial automation systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C7.5A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 3.75A, 5V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageTO-252AA
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds755 pF @ 25 V

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