IRLR210ATF
MOSFET N-CH 200V 2.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRLR210ATF is a N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 2.7A at 25°C (Tc). With a maximum Rds(on) of 1.5Ohm at 1.35A and 5V Vgs, it offers efficient switching characteristics. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount configuration, supplied on tape and reel. Key parameters include a Gate Charge (Qg) of 9 nC at 5V and an Input Capacitance (Ciss) of 240 pF at 25V. The device supports a maximum Gate-to-Source Voltage (Vgs) of ±20V and operates within a temperature range of -55°C to 150°C (TJ). Power dissipation is rated at 2.5W (Ta) and 21W (Tc). This component finds application in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.35A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 21W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
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