IRLR110ATM
MOSFET N-CH 100V 4.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi IRLR110ATM is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 4.7 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 440 mOhm at 2.35 A and a gate-source voltage (Vgs) of 5 V, it offers low conduction losses. The device supports a gate drive voltage range up to ±20 V and has a typical gate charge (Qg) of 8 nC at 5 V.
This MOSFET is housed in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. It provides a power dissipation of 2.5 W (Ta) and 22 W (Tc). Operating across a temperature range of -55°C to 150°C (TJ), the IRLR110ATM is utilized in various industrial sectors including automotive, consumer electronics, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 2.35A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 22W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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