IRLR110ATF
MOSFET N-CH 100V 4.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi IRLR110ATF is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 4.7A at 25°C (Tc). The device exhibits a maximum On-Resistance (Rds On) of 440mOhm at 2.35A and a gate-source voltage (Vgs) of 5V. Key electrical parameters include a typical Gate Charge (Qg) of 8nC and Input Capacitance (Ciss) of 235pF, both specified at 5V Vgs and 25V Vds respectively. With a maximum power dissipation of 22W at 25°C (Tc), this MOSFET is housed in a TO-252AA (DPAK) surface-mount package, suitable for various industrial and automotive power management systems. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 440mOhm @ 2.35A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 22W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 235 pF @ 25 V |
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